MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch, 1st Edition

  • Published By:
  • ISBN-10: 3319011650
  • ISBN-13: 9783319011653
  • DDC: 621.381528
  • Grade Level Range: College Freshman - College Senior
  • 199 Pages | eBook
  • Original Copyright 2014 | Published/Released May 2014
  • This publication's content originally published in print form: 2014

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This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Table of Contents

Front Cover.
Other Frontmatter.
Title Page.
Copyright Page.
List of Figures.
List of Tables.
1: Introduction.
2: Design of Double-Pole Four-Throw RF Switch.
3: Design of Double-Gate MOSFET.
4: Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.
5: Cylindrical Surrounding Double-Gate RF MOSFET.
6: Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.
7: Testing of MOSFETs Surfaces Using Image Acquisition.
8: Conclusions and Future Scope.
Appendix A: List of Symbols.
Appendix B: List of Definitions.
Appendix C: Outcomes of the Book.
About the Authors.