Fundamentals of Nanoscaled Field Effect Transistors, 1st Edition

  • Published By:
  • ISBN-10: 1461468221
  • ISBN-13: 9781461468226
  • DDC: 621.381528
  • Grade Level Range: College Freshman - College Senior
  • 201 Pages | eBook
  • Original Copyright 2013 | Published/Released April 2014
  • This publication's content originally published in print form: 2013

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Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Table of Contents

Front Cover.
Half Title Page.
Title Page.
Copyright Page.
1: Scaling of a MOS Transistor.
2: Nanoscale Effects: Gate Oxide Leakage Currents.
3: Nanoscale Effects: Inversion Layer Quantization.
4: Dielectrics for Nanoelectronics.
5: Germanium Technology.
6: Biaxial s-Si Technology.
7: Uniaxial s-Si Technology.
8: Alternate Structures for Nanoelectronic Applications.
9: Graphene Technology.
WKB Approximation.
About the Editor.