Bismuth-Containing Compounds, 1st Edition

  • Published By:
  • ISBN-10: 146148121X
  • ISBN-13: 9781461481218
  • DDC: 620.1895
  • Grade Level Range: College Freshman - College Senior
  • 379 Pages | eBook
  • Original Copyright 2013 | Published/Released May 2014
  • This publication's content originally published in print form: 2013

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Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field.  Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

Table of Contents

Front Cover.
Half Title Page.
Other Frontmatter.
Title Page.
Copyright Page.
1: Dilute Bismides for Mid-IR Applications.
2: Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications.
3: Theory of the Electronic Structure of Dilute Bismide Alloys: Tight-Binding and K · P Models.
4: Dilute Bismuthides on an InP Platform.
5: Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate.
6: Group III–V Bismide Materials Grown by Liquid Phase Epitaxy.
7: Spectroscopic Ellipsometry of AP-MOVPE-Grown GaAs1−xBix Dilute Alloys.
8: Effect of Bismuth Alloying on the Transport Properties of the Dilute Bismide Alloy, GaAs1−xBix.
9: Localized States in GaAsBi and GaAs/GaAsBi Heterostructures.
10: Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors.
11: MBE Growth of Thin Hexagonal Films Bi2Te3, Bi2Se3, and Their Alloys on Cubic GaAs (001) Substrates.
12: Vapor Phase Deposition Synthesis of Bismuth- Based Topological Insulator Nanoplates and Their Electrostatic Properties.
13: Electronic and Optical Properties of Domain Walls and Phase Boundaries in Bismuth Ferrite.
14: Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure.
15: Bismuth(V)-Containing Semiconductor Compounds and Applications in Heterogeneous Photocatalysis.